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8 March 2014 Electroluminescence from ZnO nanowire-based heterojunction LED
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870H (2014)
Event: SPIE OPTO, 2014, San Francisco, California, United States
We have demonstrated that fabrication of the ZnO nanowire/GaN hetero-junction light emitting diode (LED) by contacting the tip of the ZnO nanowires with the GaN film, and UV electroluminescence from the p-n junction. In this study, we fabricated the heterojunction by directly-growth of the ZnO nanowires on the GaN film using nanoparticleassisted pulsed laser deposition. Photoluminescence spectrum of the ZnO nanowires showed a weak near-band-edge ultraviolet (UV) emission and a visible broad emission, which was related to transition by ZnO defect state. We applied a selective laser irradiation to the p-n junction of the ZnO-based LED. The UV emission was strongly enhanced from the laser-irradiated p-n junction.
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D. Nakamura, N. Tetsuyama, T. Shimogaki, M. Higashihata, H. Ikenoue, and T. Okada "Electroluminescence from ZnO nanowire-based heterojunction LED", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870H (8 March 2014);

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