8 March 2014 Effect of lithium-ion implantation of varying fluence on the optical properties of ZnMgO
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870I (2014) https://doi.org/10.1117/12.2041865
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
The large bandgap (3.37 eV) and exciton binding energy (60 meV) makes ZnO most promising material in the area of optoelectronic devices. The efficiency of these devices can be enhanced by increasing the bandgap of those materials which is possible by band-gap engineering. It has been found that incorporation of Mg can increase the bandgap of the alloy up to 4 eV and even more. We investigated the optical properties of Zn1-x MgxO film implanted by Li at low energy (40 KeV) with dosage of 5x1013 ions/cm2 and 1014 ions/cm2 respectively. Prior to implantation 150 nm Zn1-x MgxO (x=0.15) film was deposited on Si substrate followed by annealing at 650°C and 750°C. For dosage of 5x1013 ions/cm2 and 1014 ions/cm2 the low temperature (15K) and room temperature photoluminescence spectra is dominated by the emission of 3.66 eV which is the band gap energy of Zn1-xMgxO, shifts to 3.63 eV at higher dosage of ions. With increasing energy (50 KeV) this peak was revealed only at 5x1013 ions/cm2. At 1014 ions/cm2 no sign of this peak was visible. The splitting of conduction band and valence band into multiple sub-bands causes a transition between the subband of conduction band and sub-band of heavy-hole and an emission occurs at 3.58 eV referred as 11H. The existence of acceptor-bound exciton peak (A°X) around 3.33 eV and the presence of donor-to-acceptor-pair peak at 3.24 eV provide strong evidence of increased acceptor concentration.
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S. Saha, S. Nagar, S. K. Gupta, S. Chakrabarti, "Effect of lithium-ion implantation of varying fluence on the optical properties of ZnMgO", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870I (8 March 2014); doi: 10.1117/12.2041865; https://doi.org/10.1117/12.2041865
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