8 March 2014 Doping of Ga2O3 bulk crystals and NWs by ion implantation
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870M (2014) https://doi.org/10.1117/12.2037627
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Ga2O3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1×1013 to 4×1015 at/cm2. The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1×1015 at/cm2 and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at ~1100 °C; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga2O3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.
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K. Lorenz, M. Peres, M. Felizardo, J. G. Correia, L. C. Alves, E. Alves, I. López, E. Nogales, B. Méndez, J. Piqueras, M. B. Barbosa, J. P. Araújo, J. N. Gonçalves, J. Rodrigues, L. Rino, T. Monteiro, E. G. Villora, K. Shimamura, "Doping of Ga2O3 bulk crystals and NWs by ion implantation", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870M (8 March 2014); doi: 10.1117/12.2037627; https://doi.org/10.1117/12.2037627
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