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8 March 2014 Augmented methods for growth and development of novel multi-cation oxides
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870V (2014) https://doi.org/10.1117/12.2045292
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Multi-cation oxides with crystalline perfection known from single crystals of Si or Ge are a challenge not only for basic research but also towards a revolution of oxide electronic materials. Here, we present our approach for the synthesis of high-quality thin films of multi-cation oxides. We show that our synthesis method, using state-of the-art molecular beam epitaxy (MBE), facilitates for the design of new materials. We geared our MBE system with a precise rate control system of each constituent cation flux as well as activated oxygen (O*) and ozone (O3). The resulting performances of our MBE setup are unmatched with respect to high-quality film growth as well as multi-cation flexibility by demonstrating growth of various cuprate-, scandate-, argentate-, titanate-, and ruthenate thin films. Such augmented methods are key to novel materials and go well beyond the artificial stacking of known materials and lattices.
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Hideki Yamamoto, Yoshiharu Krockenberger, and Michio Naito "Augmented methods for growth and development of novel multi-cation oxides", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870V (8 March 2014); https://doi.org/10.1117/12.2045292
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