8 March 2014 Growth of crystalline LaAlO3 by atomic layer deposition
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 898712 (2014) https://doi.org/10.1117/12.2045532
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Crystalline lanthanum aluminate (LAO) films were grown epitaxially on SrTiO3(001) and on Si(001) with a buffer layer of four unit cells of SrTiO3 by atomic layer deposition. The SrTiO3 buffer layer was grown by molecular beam epitaxy. Tris(N,N’-diisopropylformamidinate)-lanthanum, trimethylaluminum, and water as co-reactants were employed at 250 °C for atomic layer deposition. Films were characterized using ex-situ reflection high-energy electron diffraction, X-ray diffraction and in-situ X-ray photoelectron spectroscopy. The as-deposited LAO films were amorphous. Different annealing conditions were necessary to realize crystalline films because of different degrees of tensile strain between crystalline LAO and the SrTiO3 or the Si(001) substrate. When grown on SrTiO3(001), with a lattice mismatch of 2.9%, annealing temperatures of 750 °C for 2 h were necessary. Crystalline films were realized at 600 °C under vacuum at 2 h for SrTiO3-buffered Si(001), with a lattice mismatch of 1.3%. By keeping the annealing temperature relatively low (2 h at 600 °C under vacuum), the interfacial amorphous layer at the STO/Si interface was minimized to about one monolayer and an abrupt interface between SrTiO3 and LAO was maintained.
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Thong Q. Ngo, Martin D. McDaniel, Agham Posadas, Alexander A. Demkov, John G. Ekerdt, "Growth of crystalline LaAlO3 by atomic layer deposition", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898712 (8 March 2014); doi: 10.1117/12.2045532; https://doi.org/10.1117/12.2045532
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