Growth of crystalline LaAlO3 by atomic layer deposition

Thong Q. Ngo; Martin D. McDaniel; Agham Posadas; Alexander A. Demkov; John G. Ekerdt

doi:10.1117/12.2045532

8 March 2014 Growth of crystalline LaAlO₃ by atomic layer deposition

Thong Q. Ngo, Martin D. McDaniel, Agham Posadas, Alexander A. Demkov, John G. Ekerdt

Proceedings Volume 8987, Oxide-based Materials and Devices V; 898712 (2014) https://doi.org/10.1117/12.2045532
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Crystalline lanthanum aluminate (LAO) films were grown epitaxially on SrTiO₃(001) and on Si(001) with a buffer layer of four unit cells of SrTiO₃ by atomic layer deposition. The SrTiO₃ buffer layer was grown by molecular beam epitaxy. Tris(N,N’-diisopropylformamidinate)-lanthanum, trimethylaluminum, and water as co-reactants were employed at 250 °C for atomic layer deposition. Films were characterized using ex-situ reflection high-energy electron diffraction, X-ray diffraction and in-situ X-ray photoelectron spectroscopy. The as-deposited LAO films were amorphous. Different annealing conditions were necessary to realize crystalline films because of different degrees of tensile strain between crystalline LAO and the SrTiO₃ or the Si(001) substrate. When grown on SrTiO₃(001), with a lattice mismatch of 2.9%, annealing temperatures of 750 °C for 2 h were necessary. Crystalline films were realized at 600 °C under vacuum at 2 h for SrTiO₃-buffered Si(001), with a lattice mismatch of 1.3%. By keeping the annealing temperature relatively low (2 h at 600 °C under vacuum), the interfacial amorphous layer at the STO/Si interface was minimized to about one monolayer and an abrupt interface between SrTiO₃ and LAO was maintained.

Citation Download Citation

Thong Q. Ngo, Martin D. McDaniel, Agham Posadas, Alexander A. Demkov, and John G. Ekerdt "Growth of crystalline LaAlO₃ by atomic layer deposition", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898712 (8 March 2014); https://doi.org/10.1117/12.2045532

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