8 March 2014 Is ZnO as a universal semiconductor material an oxymoron?
Author Affiliations +
Proceedings Volume 8987, Oxide-based Materials and Devices V; 898718 (2014) https://doi.org/10.1117/12.2042926
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
The wide-bandgap semiconductor ZnO has gained major interest in research community for its unique properties and wide range of applications. In this review article, we present synthesis techniques and a few emerging applications for ZnO. Common techniques for growing ZnO films are discussed briefly, and a detailed discussion of MOCVD growth of ZnO is provided citing previous experimental reports on this technique by our group and others. A few important and distinctive uses of ZnO are discussed for various applications focusing on the current limitations of ZnO to realize its feasibility in these applications.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Hussain, B. Kucukgok, M. Y. A. Raja, Benjamin Klein, N. Lu, I. T. Ferguson, "Is ZnO as a universal semiconductor material an oxymoron?", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898718 (8 March 2014); doi: 10.1117/12.2042926; https://doi.org/10.1117/12.2042926
PROCEEDINGS
14 PAGES


SHARE
Back to Top