8 March 2014 High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89871P (2014) https://doi.org/10.1117/12.2045555
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
High quality w-MgxZn1-xO thin films were grown epitaxially on c-plane sapphire substrates by plasma-assisted Molecular Beam Epitaxy. ZnO thin films with high crystalline quality, low defect and dislocation densities, and subnanometer surface roughness were achieved by applying a low temperature nucleation layer. By tuning Mg/Zn flux ratio, wurtzite MgxZn1-xO thin films with Mg composition as high as x=0.46 were obtained without phase segregation. Metal- Semiconductor-Metal (MSM) photoconductive and Schottky barrier devices with interdigitated electrode geometry and active surface area of 1 mm2 were fabricated and characterized. Resultant devices showed ~100 A/W peak responsivity at wavelength of ~260nm. We also report on cubic rock salt c-MgxZn1-xO thin films, following a non-traditional approach on MgO substrates, to demonstrate solar-blind photoresponse in MSM photodetectors, realizing a peak responsivity of 460 A/W (@ 250 nm) and 12.6 mA/W (@ 240nm) for mixed phase and single crystal films, respectively. A specific focus of the work is on identifying the impact of various growth parameters on the performance of the c- MgZnO detectors.
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Winston V. Schoenfeld, Winston V. Schoenfeld, Ming Wei, Ming Wei, R. Casey Boutwell, R. Casey Boutwell, Huiyong Liu, Huiyong Liu, } "High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871P (8 March 2014); doi: 10.1117/12.2045555; https://doi.org/10.1117/12.2045555
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