8 March 2014 β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3 potential for next generation of power devices
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89871U (2014) https://doi.org/10.1117/12.2039305
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
β-Ga2O3 is the most transparent conductive oxide, well known since several decades for its large bandgap of 4.8 eV. Its potential as semiconductor material, however, is just emerging in recent years. Present work shows the development of βGa2O3 for semiconductor applications and its current state-of-the-art. The discussion is focused on three different aspects: (1) Advantageous growth from melt of large-size β-Ga2O3single-crystals. High-crystalline quality and carrier control make possible the production of conductive and semi-insulating wafers. (2) β-Ga2O3as substrate for homoepitaxy as well as for heteroepitaxial deposition of GaN-based devices. High-brightness blue-LEDs with vertical current injection are demonstrated. (3) Potential of β-Ga2O3for high-power devices with higher breakdown voltage than GaN and SiC counterparts. The first Schottky barrier diode is shown, as well as first transistors (MESFET and MOSFET) are indicated. Single-crystal phosphors are introduced as novel alternative to currently used powder phosphors. In connection with high-brightness white light-sources, based on LEDs or LDs plus phosphor converters, single-crystal phosphors possess advantageous features. These avoid the use of resins and exhibit a very high internal quantum efficiency, which remains stable with the temperature increase.
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Encarnación Garcia Víllora, Encarnación Garcia Víllora, Stelian Arjoca, Stelian Arjoca, Kiyoshi Shimamura, Kiyoshi Shimamura, Daisuke Inomata, Daisuke Inomata, Kazuo Aoki, Kazuo Aoki, } "β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3 potential for next generation of power devices", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871U (8 March 2014); doi: 10.1117/12.2039305; https://doi.org/10.1117/12.2039305
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