8 March 2014 Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes
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Abstract
We demonstrate the feasibility of producing advanced silicon photonic devices for future data communication nodes at 40Gbps using CMOS compatible processes in a 300mm wafer fab. Basic building blocks are shown together with various wavelength division multiplexing solutions. All the devices presented are integrated on 220nm SOI or locally grown epitaxial germanium.
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Charles Baudot, Jean-Marc Fédéli, Delphine Marris-Morini, Boris Caire-Remonnay, Léopold Virot, Ségolène Olivier, André Myko, Philippe Grosse, Gilles Grand, Badhise Ben Bakir, Jean-Michel Hartmann, Nacima Allouti, Sébastien Barnola, Christian Vizioz, Maurice Rivoire, Aurélien Seignard, Nathalie Vulliet, Aurélie Souhaité, Sonia Messaoudène, Ian O'Connor, Laurent Vivien, Sylvie Menezo, Frédéric Boeuf, "Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes", Proc. SPIE 8988, Integrated Optics: Devices, Materials, and Technologies XVIII, 89880O (8 March 2014); doi: 10.1117/12.2042496; https://doi.org/10.1117/12.2042496
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