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8 March 2014 Photonic integrated circuit on InP for millimeter wave generation
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Abstract
Indium phosphide and associated epitaxially grown alloys is a material system of choice to make photonic integrated circuits for microwave to terahertz signal generation, processing and detection. Fabrication of laser emitters, high speed electro-optical modulators, passive waveguides and couplers, optical filters and high speed photodetectors is well mastered for discrete devices. But monolithic integration of them while maintaining good performances is a big challenge. We have demonstrated a fully integrated tunable heterodyne source designed for the generation and modulation of sub-Terahertz signals. This device is to be used for high data-rate wireless transmissions. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, electro-optic modulators and high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation at up to 120 GHz based on heterodyning the optical tones from two integrated lasers in an also integrated high bandwidth photodetector has been obtained.
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Frederic van Dijk, Marco Lamponi, Mourad Chtioui, François Lelarge, Gaël Kervella, Efthymios Rouvalis, Cyril Renaud, Martyn Fice, and Guillermo Carpintero "Photonic integrated circuit on InP for millimeter wave generation", Proc. SPIE 8988, Integrated Optics: Devices, Materials, and Technologies XVIII, 89880Q (8 March 2014); https://doi.org/10.1117/12.2036571
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