8 March 2014 A broadband silicon electro-absorption modulator (EAM) using a Schottky diode
Author Affiliations +
Proceedings Volume 8988, Integrated Optics: Devices, Materials, and Technologies XVIII; 89881M (2014); doi: 10.1117/12.2038800
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
A silicon optical modulator operating at high speed and low voltage is proposed by using a Schottky diode. The optical modulation is achieved by the intensity change of guiding light due to free-carrier absorption, not conventional interference effects. The rib waveguide structure of the modulator has a height of 340 nm, a etch depth of 150 nm, a width of 4.8 μm, and a modulation length of 500 μm. It was designed to maximize the free carrier injection by a Schottky contact on the rib waveguide center. The center of the rib waveguide is lightly doped with phosphorus of 1016 cm−3, and the sides are heavily doped with phosphorus of 1020 cm−3 to improve modulation depth by injecting free carriers into the center of the rib waveguide. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve high speed operation, travelling-wave type electrodes were designed to allow co-propagation of electrical and optical signals along the waveguide. The device simulated results demonstrate a 3.3 dB modulation depth for a 500 μm modulation length with 3 Vpp driving voltages. We demonstrated a Schottky modulator operating Si EAM at 3 Vpp with a 3 dB bandwidth of 7 GHz.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Uiseok Jeong, Dongchul Han, Dong Ho Lee, Kyungwoon Lee, J. Kim, Jung Ho Park, "A broadband silicon electro-absorption modulator (EAM) using a Schottky diode", Proc. SPIE 8988, Integrated Optics: Devices, Materials, and Technologies XVIII, 89881M (8 March 2014); doi: 10.1117/12.2038800; https://doi.org/10.1117/12.2038800
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Modulation

Modulators

Waveguides

Silicon

Diodes

Absorption

Electrodes

RELATED CONTENT

Graphene optical modulator
Proceedings of SPIE (September 19 2011)
Deep level charge state control a novel method for...
Proceedings of SPIE (February 02 2012)
High speed silicon optical modulator
Proceedings of SPIE (February 16 2010)

Back to Top