8 March 2014 High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography
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Abstract
A simple method of growing large areas of InP on Si through Epitaxial Lateral Overgrowth (ELOG) is presented. Isolated areas of high quality InP suitable for photonic integration are grown in deeply etched SiO2 mask fabricated using conventional optical lithography and reactive ion etching. This method is particularly attractive for monolithically integrating laser sources grown on InP with Si/SiO2 waveguide structure as the mask. The high optical quality of multi quantum well (MQW) layers grown on the ELOG layer is promisingly supportive of the feasibility of this method for mass production.
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Himanshu Kataria, Wondwosen T. Metaferia, Carl Junesand, Chong Zhang, John E. Bowers, Sebastian Lourdudoss, "High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography", Proc. SPIE 8989, Smart Photonic and Optoelectronic Integrated Circuits XVI, 898904 (8 March 2014); doi: 10.1117/12.2039794; https://doi.org/10.1117/12.2039794
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