Observation of optically induced transparency effect in silicon nanophotonic wires with graphene

Longhai Yu; Jiajiu Zheng; Daoxin Dai; Sailing He

doi:10.1117/12.2047618

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8 March 2014 Observation of optically induced transparency effect in silicon nanophotonic wires with graphene

Longhai Yu, Jiajiu Zheng, Daoxin Dai, Sailing He

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Proceedings Volume 8989, Smart Photonic and Optoelectronic Integrated Circuits XVI; 89890C (2014) https://doi.org/10.1117/12.2047618
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Graphene, a well-known two-dimensional sheet of carbon atoms in a honeycomb structure, has many unique and fascinating properties in optoelectronics and photonics. Integration of graphene on silicon nanophotonic wires is a promising approach to enhance light-graphene interactions. In this paper, we demonstrate on-chip silicon nanophotonic wires covered by graphene with CMOS-compatible fabrication processes. Under the illumination of pump light on the graphene sheet, a loss reduction of silicon nanophotonic wires, which is called optically induced transparency (OIT) effect, is observed over a broad wavelength range for the first time. The pump power required to generate the OIT effect is as low as ~0.1mW and the corresponding power density is about 2×10³mW/cm², which is significantly different from the saturated absorption effect of graphene reported previously. The extremely low power density implies a new mechanism for the present OIT effect, which will be beneficial to realize silicon on-chip all-optical controlling in the future. It also suggests a new and efficient approach to tune the carrier concentration (doping level) in graphene optically.

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Longhai Yu, Jiajiu Zheng, Daoxin Dai, and Sailing He "Observation of optically induced transparency effect in silicon nanophotonic wires with graphene", Proc. SPIE 8989, Smart Photonic and Optoelectronic Integrated Circuits XVI, 89890C (8 March 2014); https://doi.org/10.1117/12.2047618

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