Translator Disclaimer
Paper
8 March 2014 Observation of optically induced transparency effect in silicon nanophotonic wires with graphene
Author Affiliations +
Abstract
Graphene, a well-known two-dimensional sheet of carbon atoms in a honeycomb structure, has many unique and fascinating properties in optoelectronics and photonics. Integration of graphene on silicon nanophotonic wires is a promising approach to enhance light-graphene interactions. In this paper, we demonstrate on-chip silicon nanophotonic wires covered by graphene with CMOS-compatible fabrication processes. Under the illumination of pump light on the graphene sheet, a loss reduction of silicon nanophotonic wires, which is called optically induced transparency (OIT) effect, is observed over a broad wavelength range for the first time. The pump power required to generate the OIT effect is as low as ~0.1mW and the corresponding power density is about 2×103mW/cm2, which is significantly different from the saturated absorption effect of graphene reported previously. The extremely low power density implies a new mechanism for the present OIT effect, which will be beneficial to realize silicon on-chip all-optical controlling in the future. It also suggests a new and efficient approach to tune the carrier concentration (doping level) in graphene optically.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Longhai Yu, Jiajiu Zheng, Daoxin Dai, and Sailing He "Observation of optically induced transparency effect in silicon nanophotonic wires with graphene", Proc. SPIE 8989, Smart Photonic and Optoelectronic Integrated Circuits XVI, 89890C (8 March 2014); https://doi.org/10.1117/12.2047618
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top