8 March 2014 The Euler bend: paving the way for high-density integration on micron-scale semiconductor platforms
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Proceedings Volume 8990, Silicon Photonics IX; 899004 (2014) https://doi.org/10.1117/12.2039912
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
We present our recent breakthrough for high density integration in micron-scale thick semiconductor platforms. The novel bend concept is presented from a theoretical point of view and supported by experimental results on silicon strip waveguides, including the smallest low-loss bends ever reported for an optical waveguide. Some experimental example applications to resonators, spirals, and Mach-Zehnder interferometers are also presented, along with envisaged applications to other semiconductor platforms. A special focus will be dedicated to potential applications in III-V platforms, where the novel bend could lead to unprecedented dense integration of devices as well as to novel concepts for active components.
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Matteo Cherchi, Matteo Cherchi, Sami Ylinen, Sami Ylinen, Mikko Harjanne, Mikko Harjanne, Markku Kapulainen, Markku Kapulainen, Tapani Vehmas, Tapani Vehmas, Timo Aalto, Timo Aalto, "The Euler bend: paving the way for high-density integration on micron-scale semiconductor platforms", Proc. SPIE 8990, Silicon Photonics IX, 899004 (8 March 2014); doi: 10.1117/12.2039912; https://doi.org/10.1117/12.2039912
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