8 March 2014 High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering
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Proceedings Volume 8990, Silicon Photonics IX; 89900L (2014) https://doi.org/10.1117/12.2038195
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Graded junction, carrier energy and momentum engineering concepts have been utilized to realize a high intensity 100 nW 5GHz Silicon Avalanche based LED (Si Av LED). A silicon 0.35 micron RF bi-polar process was used as design and processing technology. Particularly, the carrier momentum and energy distributions were modeled in graded junction Silicon p+-i-n structures, and utilized to increase optical yield. Best performance are up to 750nW emission in a 7 micron square active area at 10 V and 1mA. The device show up to 5 GHz modulation bandwidth. The spectral range is from 450 nm to 850 nm with an emphasized components in the white spectral region. The process is greatly CMOS compatible. The technology is particularly suitable for application in futuristic on- chip micro-photonic systems, lab-on chip systems, silicon- based micro display systems, on chip optical links, and optical inter-connects systems.
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Lukas W. Snyman, Lukas W. Snyman, Jean-Luc Polleux, Jean-Luc Polleux, Kingsley A. Ogudo, Kingsley A. Ogudo, Carlos Viana, Carlos Viana, Sebastain Wahl, Sebastain Wahl, } "High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering", Proc. SPIE 8990, Silicon Photonics IX, 89900L (8 March 2014); doi: 10.1117/12.2038195; https://doi.org/10.1117/12.2038195
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