8 March 2014 High-contrast and accurate high-speed simulation of silicon-based modulators
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Proceedings Volume 8990, Silicon Photonics IX; 899011 (2014) https://doi.org/10.1117/12.2035906
Event: SPIE OPTO, 2014, San Francisco, California, United States
Silicon-based optical modulator devices have experienced dramatic improvements over the last decade with data rates up to 50Gbps for On-Off-Keying (OOK) consuming ultra low power in fJ/bit [1-3]. The ability to fully understand the performances of these plasma dispersion effect-based devices from a simulation standpoint could be further improved especially in the coupling of high-speed electrical and optical effects. Here, we report an accurate methodology to study high-speed eye diagrams from the electrical and optical simulation data of individual silicon modulators. In particular, we demonstrate the capacity of this simulation methodology by applying it to the current state-of-the-art experimental demonstrated silicon optical modulator using OOK at 50Gbps [3].
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Eng Png, Ching Eng Png, Min Jie Sun, Min Jie Sun, Soon Thor Lim, Soon Thor Lim, David Thomson, David Thomson, "High-contrast and accurate high-speed simulation of silicon-based modulators", Proc. SPIE 8990, Silicon Photonics IX, 899011 (8 March 2014); doi: 10.1117/12.2035906; https://doi.org/10.1117/12.2035906

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