8 March 2014 40 Gbit/s silicon modulators fabricated on 200-mm and 300-mm SOI wafers
Author Affiliations +
Proceedings Volume 8990, Silicon Photonics IX; 899012 (2014) https://doi.org/10.1117/12.2039288
Event: SPIE OPTO, 2014, San Francisco, California, United States
We present 40 Gbit/s optical modulators based on different types of phase shifters (lateral pn, pipin, and interleaved pn junction phase). Those structures were processed both on 200 and 300mm SOI wafers, available in large-scale microelectronic foundries. Both Ring Resonators (RR) and Mach Zehnder (MZ) modulators were fabricated. As an example, MZ modulator based on 0.95 mm long interleaved pn junction phase shifter delivered a high ER of 7.8 dB at 40 Gbit/s with low optical loss of only 4 dB. Ring modulator was also fabricated and characterized at high-speed, exhibiting 40 Gbit/s.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Delphine Marris-Morini, Charles Baudot, Jean-Marc Fédéli, Gilles Rasigade, Nathalie Vuillet, Aurélie Souhaité, Melissa Ziebell, Pierette Rivalin, Ségolène Olivier, Paul Crozat, David Bouville, Sylvie Menezo, Frédéric Boeuf, Laurent Vivien, "40 Gbit/s silicon modulators fabricated on 200-mm and 300-mm SOI wafers", Proc. SPIE 8990, Silicon Photonics IX, 899012 (8 March 2014); doi: 10.1117/12.2039288; https://doi.org/10.1117/12.2039288


Back to Top