8 March 2014 40 Gbit/s silicon modulators fabricated on 200-mm and 300-mm SOI wafers
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Proceedings Volume 8990, Silicon Photonics IX; 899012 (2014) https://doi.org/10.1117/12.2039288
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
We present 40 Gbit/s optical modulators based on different types of phase shifters (lateral pn, pipin, and interleaved pn junction phase). Those structures were processed both on 200 and 300mm SOI wafers, available in large-scale microelectronic foundries. Both Ring Resonators (RR) and Mach Zehnder (MZ) modulators were fabricated. As an example, MZ modulator based on 0.95 mm long interleaved pn junction phase shifter delivered a high ER of 7.8 dB at 40 Gbit/s with low optical loss of only 4 dB. Ring modulator was also fabricated and characterized at high-speed, exhibiting 40 Gbit/s.
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Delphine Marris-Morini, Delphine Marris-Morini, Charles Baudot, Charles Baudot, Jean-Marc Fédéli, Jean-Marc Fédéli, Gilles Rasigade, Gilles Rasigade, Nathalie Vuillet, Nathalie Vuillet, Aurélie Souhaité, Aurélie Souhaité, Melissa Ziebell, Melissa Ziebell, Pierette Rivalin, Pierette Rivalin, Ségolène Olivier, Ségolène Olivier, Paul Crozat, Paul Crozat, David Bouville, David Bouville, Sylvie Menezo, Sylvie Menezo, Frédéric Boeuf, Frédéric Boeuf, Laurent Vivien, Laurent Vivien, } "40 Gbit/s silicon modulators fabricated on 200-mm and 300-mm SOI wafers", Proc. SPIE 8990, Silicon Photonics IX, 899012 (8 March 2014); doi: 10.1117/12.2039288; https://doi.org/10.1117/12.2039288
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