Translator Disclaimer
8 March 2014 Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors
Author Affiliations +
Proceedings Volume 8990, Silicon Photonics IX; 899014 (2014)
Event: SPIE OPTO, 2014, San Francisco, California, United States
GeSi based photodetectors and avalanche photodetectors on silicon photonics platform have been widely studied in the past decade due to its low cost nature and compatibility with CMOS fabrication process. Conventionally, high-quality Ge on Si is obtained by a direct epitaxy growth or by a wafer/die bonding technique, which complicates the possible on-chip integration with CMOS electronics such as transimpedance amplifier, equalizer and limiting amplifier etc. Recently, rapid-melt growth of Ge on insulator emerged as a new method to produce high-quality Ge stripes. In this paper, we present our effort in making waveguide based photodetectors and avalanche photodetectors using Ge rapid-melt growth. First, we demonstrate a high-performance, high-speed GeSi heterojunction photodiode by a self-aligned microbonding technique utilizing surface tension. Such a method is subsequently extended to fabricate a novel butt-coupled, high-speed metal-semiconductor-metal Ge photodetector. At the same time, we study the possibility of operating GeSi avalanche photodetectors at a low bias voltage to be compatible with standard CMOS IC power supply. Based on the theoretical and numerical results, a new type of GeSi avalanche photodetector in three-terminal configuration is proposed and demonstrated, reaching the lowest possible operation bias voltage constrained by Zener tunneling breakdown.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Neil Na, Chih-Kuo Tseng, Yimin Kang, and Ming-Chang M. Lee "Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors", Proc. SPIE 8990, Silicon Photonics IX, 899014 (8 March 2014);


High performance Ge-on-Si avalanche photodetector
Proceedings of SPIE (March 15 2016)
Ge/SiGe for silicon photonics
Proceedings of SPIE (January 28 2017)
Progress toward competitive Ge/Si photodetectors
Proceedings of SPIE (May 01 2008)
Silicon-based long wavelength photodetectors
Proceedings of SPIE (December 02 2009)

Back to Top