8 March 2014 Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
Author Affiliations +
Proceedings Volume 8990, Silicon Photonics IX; 899017 (2014) https://doi.org/10.1117/12.2039239
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Adamo, D. Agrò, S. Stivala, A. Parisi, L. Curcio, A. Andò, A. Tomasino, C. Giaconia, A. C. Busacca, M. C. Mazzillo, D. Sanfilippo, P. G. Fallica, "Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring", Proc. SPIE 8990, Silicon Photonics IX, 899017 (8 March 2014); doi: 10.1117/12.2039239; https://doi.org/10.1117/12.2039239
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Wide bandgap UV photodetectors a short review of devices...
Proceedings of SPIE (February 08 2007)
AlGaN ultraviolet detectors
Proceedings of SPIE (April 15 1997)
Noises of p-i-n UV photodetectors
Proceedings of SPIE (June 11 2007)
Semiconductor ultraviolet detectors
Proceedings of SPIE (April 12 1996)

Back to Top