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8 March 2014 Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
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Proceedings Volume 8990, Silicon Photonics IX; 899017 (2014)
Event: SPIE OPTO, 2014, San Francisco, California, United States
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Adamo, D. Agrò, S. Stivala, A. Parisi, L. Curcio, A. Andò, A. Tomasino, C. Giaconia, A. C. Busacca, M. C. Mazzillo, D. Sanfilippo, and P. G. Fallica "Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring", Proc. SPIE 8990, Silicon Photonics IX, 899017 (8 March 2014);


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