8 March 2014 Strain engineering in germanium microdisks
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Proceedings Volume 8990, Silicon Photonics IX; 89901C (2014) https://doi.org/10.1117/12.2037307
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
The keystone to realize a monolithic integrated source on silicon with germanium is to optimize tensile strain and n-doping. In order to realize an integrated compact source, we demonstrate highly strained n-doped germanium microdisks obtained by two approaches using initially compressed silicon nitride (SiN) deposition. In the first approach, the microdisks are fabricated from relaxed Ge. In a second approach, we use tensile-strained Ge grown on a mismatched buffer layer, thus increasing the global strain in the Ge volume and lowering its gradient. A photoluminescence red-shift up to 450 nm is observed, corresponding to more than 1% biaxial strain.
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A. Ghrib, M. El Kurdi, M. Prost, M. de Kersauson, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, X. Checoury, G. Ndong, M. Chaigneau, R. Ossikovski, S. David, I. Sagnes, P. Boucaud, "Strain engineering in germanium microdisks", Proc. SPIE 8990, Silicon Photonics IX, 89901C (8 March 2014); doi: 10.1117/12.2037307; https://doi.org/10.1117/12.2037307
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