Strain engineering in germanium microdisks

A. Ghrib; M. El Kurdi; M. Prost; M. de Kersauson; L. Largeau; O. Mauguin; G. Beaudoin; S. Sauvage; X. Checoury; G. Ndong; M. Chaigneau; R. Ossikovski; S. David; I. Sagnes; P. Boucaud

doi:10.1117/12.2037307

8 March 2014 Strain engineering in germanium microdisks

A. Ghrib, M. El Kurdi, M. Prost, M. de Kersauson, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, X. Checoury, G. Ndong, M. Chaigneau, R. Ossikovski, S. David, I. Sagnes, P. Boucaud

Author Affiliations +

Proceedings Volume 8990, Silicon Photonics IX; 89901C (2014) https://doi.org/10.1117/12.2037307
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

The keystone to realize a monolithic integrated source on silicon with germanium is to optimize tensile strain and n-doping. In order to realize an integrated compact source, we demonstrate highly strained n-doped germanium microdisks obtained by two approaches using initially compressed silicon nitride (SiN) deposition. In the first approach, the microdisks are fabricated from relaxed Ge. In a second approach, we use tensile-strained Ge grown on a mismatched buffer layer, thus increasing the global strain in the Ge volume and lowering its gradient. A photoluminescence red-shift up to 450 nm is observed, corresponding to more than 1% biaxial strain.

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A. Ghrib, A. Ghrib, M. El Kurdi, M. El Kurdi, M. Prost, M. Prost, M. de Kersauson, M. de Kersauson, L. Largeau, L. Largeau, O. Mauguin, O. Mauguin, G. Beaudoin, G. Beaudoin, S. Sauvage, S. Sauvage, X. Checoury, X. Checoury, G. Ndong, G. Ndong, M. Chaigneau, M. Chaigneau, R. Ossikovski, R. Ossikovski, S. David, S. David, I. Sagnes, I. Sagnes, P. Boucaud, P. Boucaud, "Strain engineering in germanium microdisks", Proc. SPIE 8990, Silicon Photonics IX, 89901C (8 March 2014); doi: 10.1117/12.2037307; https://doi.org/10.1117/12.2037307

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