8 March 2014 Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology
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Proceedings Volume 8991, Optical Interconnects XIV; 899108 (2014) https://doi.org/10.1117/12.2038079
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Micron dimensioned on-chip optical links of 50 micron length, utilizing 650 – 850 nm propagation wavelength, have been realized in a Si Ge bipolar process. Key design strategies is the utilization of high speed avalanche based Si light emitting devices (Si Av LEds) in combination with silicon nitride based wave guides and high speeds Si Ge based optical detectors. The optical source, waveguide and detector were all integrated on the same chip. TEOS densification strategies and state of the art Si-Ge bipolar technology were further used as key design strategies. Best performances show up to 25 GHz RF carrier modulation and - 40dBm total optical link budget loss with a power consumption of only 0.1 mW per GHz bandwidth. Improvement possibilities still exist. The process used is in regular production. The technology is particularly suitable for application as optical interconnects utilizing low loss, side surface, waveguide to optical fibre coupling.
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Kingsley A. Ogudo, Lukas W. Snyman, Jean-Luc Polleux, Carlos Viana, Zerihun Tegegne, Diethelm Schmieder, "Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology", Proc. SPIE 8991, Optical Interconnects XIV, 899108 (8 March 2014); doi: 10.1117/12.2038079; https://doi.org/10.1117/12.2038079
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