8 March 2014 Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode
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Proceedings Volume 8991, Optical Interconnects XIV; 899109 (2014) https://doi.org/10.1117/12.2038642
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.
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Duanhua Kong, Taek Kim, Sihan Kim, Hyungi Hong, Igor Shcherbatko, Youngsoo Park, Dongjae Shin, Kyoung-Ho Ha, Gitae Jeong, "Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode", Proc. SPIE 8991, Optical Interconnects XIV, 899109 (8 March 2014); doi: 10.1117/12.2038642; https://doi.org/10.1117/12.2038642
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