8 March 2014 Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode
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Proceedings Volume 8991, Optical Interconnects XIV; 899109 (2014) https://doi.org/10.1117/12.2038642
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Duanhua Kong, Duanhua Kong, Taek Kim, Taek Kim, Sihan Kim, Sihan Kim, Hyungi Hong, Hyungi Hong, Igor Shcherbatko, Igor Shcherbatko, Youngsoo Park, Youngsoo Park, Dongjae Shin, Dongjae Shin, Kyoung-Ho Ha, Kyoung-Ho Ha, Gitae Jeong, Gitae Jeong, } "Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode", Proc. SPIE 8991, Optical Interconnects XIV, 899109 (8 March 2014); doi: 10.1117/12.2038642; https://doi.org/10.1117/12.2038642
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