8 March 2014 Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects
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Proceedings Volume 8991, Optical Interconnects XIV; 89910N (2014) https://doi.org/10.1117/12.2044277
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Bandwidth requirements continue to drive the need for low-power, high speed interconnects. Harnessing the mature CMOS technology for high volume manufacturing, Silicon Photonics is a top candidate for providing a viable solution for high bandwidth, low cost, low power, and high packing density, optical interconnects. The major drawback of silicon, however, is that it is an indirect bandgap material, and thus cannot produce coherent light. Consequently, different integration schemes of III/V materials on silicon are being explored. An integrated CMOS tunable laser is demonstrated as part of a composite-CMOS integration platform that enables high bandwidth optical interconnects. The integration platform embeds III-V into silicon chips using a metal bonding technique that provides low thermal resistance and avoids lattice mismatch problems. The performance of the laser including side mode suppression ratio, relative intensity noise, and linewidth is summarized.
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Timothy Creazzo, Elton Marchena, Stephen B. Krasulick, Paul K. L. Yu, Derek Van Orden, John Y. Spann, Christopher C. Blivin, Lina He, Hong Cai, John M. Dallesasse, Robert J. Stone, Amit Mizrahi, "Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects", Proc. SPIE 8991, Optical Interconnects XIV, 89910N (8 March 2014); doi: 10.1117/12.2044277; https://doi.org/10.1117/12.2044277
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