8 March 2014 Fabrication of modulators and 2×2 switches in SOI based on the carrier depletion mechanism for optical interconnects
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Proceedings Volume 8991, Optical Interconnects XIV; 899112 (2014) https://doi.org/10.1117/12.2044245
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Silicon-photonic 2×2 electro-optical switching elements and modulators based on the carrier depletion mechanism using both dual-resonator and MZI layout configurations have been developed. The passive photonic structures were developed and optimized using a fast design-fabrication-characterization cycle. The main objective is to deliver smallfootprint, low-loss and low-energy silicon photonic electro-optical switching elements and modulators equipped with standard input-output grating couplers and radio-frequency electrical contact tips to allow their characterization in highspeed probe-station setups. The insertion losses, crosstalk, power consumption and BER performance will be addressed for each electro-optical structure. The fabrication steps, including low loss waveguide patterning, pn junction and low resistive ohmic contact formation have been optimized to produce high performance devices with relaxed fabrication tolerances, employing both optical and electron-beam lithography.
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Francisco Lopez-Royo, Antoine Brimont, Christos Vagionas, George Dabos, Nikos Pleros, Konstantinos Vyrsokinos, Amadeu Griol, Juan Hurtado, Laurent Bellieres, Nuria S. Losilla, Pablo Sanchis, Luis Sanchez, Javier Marti, "Fabrication of modulators and 2×2 switches in SOI based on the carrier depletion mechanism for optical interconnects", Proc. SPIE 8991, Optical Interconnects XIV, 899112 (8 March 2014); doi: 10.1117/12.2044245; https://doi.org/10.1117/12.2044245
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