31 January 2014 Tunable excitation of two-dimensional plasmon modes in InGaAs/InP HEMT devices for terahertz detection
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Abstract
THz electromagnetic waves resonantly excite plasmons in the two dimensional electron gas (2DEG) of high electron mobility transistors (HEMTs) via grating-gate couplers. These excitations can induce measureable photoresponse. Biasing the grating gate tunes the photoresponse via control of 2DEG carrier density. Plasmons are investigated here in an InGaAs/InP HEMT with a 9 μm period grating gate at 78 and 106 GHz free-space radiation and 4K sample temperature. The dependence of the photoresponse on applied Source-Drain bias is also investigated. The minimum noise equivalent power (NEP) is estimated to be 113 pW/Hz1/2 , with maximum responsivity of 200 V/W. Such plasmonic alterations in channel conductance provide a means for voltage-tunable THz and sub-THz detectors or filters.
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Nima Nader Esfahani, Nima Nader Esfahani, Xin Qiao, Xin Qiao, Robert E. Peale, Robert E. Peale, Walter R. Buchwald, Walter R. Buchwald, Joshua R. Hendrickson, Joshua R. Hendrickson, Justin W. Cleary, Justin W. Cleary, } "Tunable excitation of two-dimensional plasmon modes in InGaAs/InP HEMT devices for terahertz detection", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930F (31 January 2014); doi: 10.1117/12.2037062; https://doi.org/10.1117/12.2037062
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