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31 January 2014 Infrared photodetector development at Fraunhofer IAF
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Fraunhofer IAF can look back on many years of expertise in developing high-performance infrared photodetectors. Since pioneering the InAs/GaSb type-II superlattice detector development, extensive capabilities of epitaxy, process technology, and device characterization of single element detectors and camera arrays for the mid- and longwave infrared (MWIR and LWIR) have been established up to the level of small-scale production. Bispectral MWIR/MWIR and MWIR/LWIR cameras based on type-II superlattices or HgCdTe are key topics at Fraunhofer IAF. Moreover, the development of InGaAs-based short-wave infrared (SWIR) photodetectors for low-light-level applications has recently been initiated. In this contribution, we report on the status of recent photodetector development activities at IAF, covering detector design, epitaxial growth, process technology, and most recent electro-optical characterization results of focal plane arrays as well as single element detectors especially for the SWIR based on InGaAs material system.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Rutz, P. Kleinow, M. Walther, R. Aidam, W. Bronner, L. Kirste, J. Niemasz, R. Rehm, J. Schmitz, T. Stadelmann, M. Wauro, A. Wörl, A. Sieck, and J. Ziegler "Infrared photodetector development at Fraunhofer IAF", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930W (31 January 2014);

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