Paper
31 January 2014 Minority carrier lifetime studies of narrow bandgap antimonide superlattices
Linda Höglund, David Z. Ting, Arezou Khoshakhlagh, Alexander Soibel, Cory J. Hill, Anita Fisher, Sam Keo, Sarath D. Gunapala
Author Affiliations +
Abstract
In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.
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Linda Höglund, David Z. Ting, Arezou Khoshakhlagh, Alexander Soibel, Cory J. Hill, Anita Fisher, Sam Keo, and Sarath D. Gunapala "Minority carrier lifetime studies of narrow bandgap antimonide superlattices", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930Y (31 January 2014); https://doi.org/10.1117/12.2031864
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KEYWORDS
Doping

Superlattices

Luminescence

Modulation

Sensors

Continuous wave operation

Signal detection

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