31 January 2014 Minority carrier lifetime studies of narrow bandgap antimonide superlattices
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Abstract
In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.
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Linda Höglund, Linda Höglund, David Z. Ting, David Z. Ting, Arezou Khoshakhlagh, Arezou Khoshakhlagh, Alexander Soibel, Alexander Soibel, Cory J. Hill, Cory J. Hill, Anita Fisher, Anita Fisher, Sam Keo, Sam Keo, Sarath D. Gunapala, Sarath D. Gunapala, } "Minority carrier lifetime studies of narrow bandgap antimonide superlattices", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930Y (31 January 2014); doi: 10.1117/12.2031864; https://doi.org/10.1117/12.2031864
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