In this communication, we examine the influence of the SL period of InAs/GaSb superlattice (SL), with diverse InAs to
GaSb thickness ratio, on the material and device properties of midwave infrared pin photodiodes. Three SL devices made
of three different periods, but exhibiting the same cut-off wavelength at 5 μm at 77K, were grown by molecular beam
epitaxy on p-type GaSb substrates. Optical and electrical characterizations (photoluminescence, current-voltage,
capacitance-voltage, and photoresponse measurements) were performed and analyzed in order to explain the results
obtained. Our investigations show the strong influence of the SL composition on both the material and photodetector
properties, such as residual doping concentration, shape of the response spectra and dark current values.