31 January 2014 InSb photodetectors with PIN and nBn designs
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InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb (100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm-2 at -50mV and R0A product as high as 6x106 WΩcm2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.
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A. Evirgen, A. Evirgen, J. Abautret, J. Abautret, J. P. Perez, J. P. Perez, H. Aït-Kaci, H. Aït-Kaci, P. Christol, P. Christol, J. Fleury, J. Fleury, H. Sik, H. Sik, A. Nedelcu, A. Nedelcu, R. Cluzel, R. Cluzel, A. Cordat, A. Cordat, "InSb photodetectors with PIN and nBn designs", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899313 (31 January 2014); doi: 10.1117/12.2039156; https://doi.org/10.1117/12.2039156

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