Design, fabrication, and characterization of InSb avalanche photodiode

J. Abautret; A. Evirgen; J. P. Perez; P. Christol; A. Rouvié; R. Cluzel; A. Cordat; J. Rothman

doi:10.1117/12.2039011

31 January 2014 Design, fabrication, and characterization of InSb avalanche photodiode

J. Abautret, A. Evirgen, J. P. Perez, P. Christol, A. Rouvié, R. Cluzel, A. Cordat, J. Rothman

Author Affiliations +

Proceedings Volume 8993, Quantum Sensing and Nanophotonic Devices XI; 899314 (2014) https://doi.org/10.1117/12.2039011
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In this communication, the potentiality of InSb material as an avalanche photodiode (APD) device is investigated. Current density-voltage (J-V) characteristics at 77K of InSb pin photodiodes were simulated by using ATLAS software from SILVACO, in dark conditions and under illumination. In order to validate parameter values used for the modeling, theoretical J-V results were compared with experimental measurements performed on InSb diodes fabricated by molecular beam epitaxy. Next, assuming a multiplication process only induced by the electrons (e-APD), different designs of separate absorption and multiplication (SAM) APD structure were theoretically investigated and the first InSb SAM APD structure with 1μm thick multiplication layer was then fabricated and characterized.

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J. Abautret, J. Abautret, A. Evirgen, A. Evirgen, J. P. Perez, J. P. Perez, P. Christol, P. Christol, A. Rouvié, A. Rouvié, R. Cluzel, R. Cluzel, A. Cordat, A. Cordat, J. Rothman, J. Rothman, "Design, fabrication, and characterization of InSb avalanche photodiode", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899314 (31 January 2014); doi: 10.1117/12.2039011; https://doi.org/10.1117/12.2039011

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