31 January 2014 Mid-IR heterogeneous silicon photonics
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In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.
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Gunther Roelkens, Utsav Dave, Alban Gassenq, Nannicha Hattasan, Chen Hu, Bart Kuyken, Francois Leo, Aditya Malik, Muhammad Muneeb, Eva Ryckeboer, Sarah Uvin, Zeger Hens, Roel G. Baets, Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Roger Loo, Joris Van Campenhout, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Xia Chen, Milos Nedeljkovic, Goran Z. Mashanovich, Li Shen, Noel Healy, Anna C. Peacock, Xiaoping Liu, Richard M. Osgood, William Green, "Mid-IR heterogeneous silicon photonics", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899316 (31 January 2014); doi: 10.1117/12.2041226; https://doi.org/10.1117/12.2041226


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