31 January 2014 Mid-IR heterogeneous silicon photonics
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Abstract
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.
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Gunther Roelkens, Gunther Roelkens, Utsav Dave, Utsav Dave, Alban Gassenq, Alban Gassenq, Nannicha Hattasan, Nannicha Hattasan, Chen Hu, Chen Hu, Bart Kuyken, Bart Kuyken, Francois Leo, Francois Leo, Aditya Malik, Aditya Malik, Muhammad Muneeb, Muhammad Muneeb, Eva Ryckeboer, Eva Ryckeboer, Sarah Uvin, Sarah Uvin, Zeger Hens, Zeger Hens, Roel G. Baets, Roel G. Baets, Yosuke Shimura, Yosuke Shimura, Federica Gencarelli, Federica Gencarelli, Benjamin Vincent, Benjamin Vincent, Roger Loo, Roger Loo, Joris Van Campenhout, Joris Van Campenhout, Laurent Cerutti, Laurent Cerutti, Jean-Baptiste Rodriguez, Jean-Baptiste Rodriguez, Eric Tournié, Eric Tournié, Xia Chen, Xia Chen, Milos Nedeljkovic, Milos Nedeljkovic, Goran Z. Mashanovich, Goran Z. Mashanovich, Li Shen, Li Shen, Noel Healy, Noel Healy, Anna C. Peacock, Anna C. Peacock, Xiaoping Liu, Xiaoping Liu, Richard M. Osgood, Richard M. Osgood, William Green, William Green, "Mid-IR heterogeneous silicon photonics", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899316 (31 January 2014); doi: 10.1117/12.2041226; https://doi.org/10.1117/12.2041226
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