High-performance single-spatial mode GaSb type-I laser diodes around 2.1 µm

Augustinas Vizbaras; Edgaras Dvinelis; Mindaugas Greibus; Augustinas Trinkunas; Deividas Kovalenkovas; Ieva Šimonytė; Kristijonas Vizbaras

doi:10.1117/12.2036523

31 January 2014 High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm

Augustinas Vizbaras, Edgaras Dvinelis, Mindaugas Greibus, Augustinas Trinkunas, Deividas Kovalenkovas, Ieva Šimonytė, Kristijonas Vizbaras

Author Affiliations +

Proceedings Volume 8993, Quantum Sensing and Nanophotonic Devices XI; 899319 (2014) https://doi.org/10.1117/12.2036523
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition these devices have characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.1 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %) GaInAsSb quantum wells. Epi-wafers were processed into a narrow-ridge (3-5 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 30 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 200 mW in CW mode with a far-field fast axis divergence angle of ~ 57 degrees.

Citation Download Citation

Augustinas Vizbaras, Edgaras Dvinelis, Mindaugas Greibus, Augustinas Trinkunas, Deividas Kovalenkovas, Ieva Šimonytė, and Kristijonas Vizbaras "High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899319 (31 January 2014); https://doi.org/10.1117/12.2036523

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available