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31 January 2014 High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm
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Abstract
Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition these devices have characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.1 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %) GaInAsSb quantum wells. Epi-wafers were processed into a narrow-ridge (3-5 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 30 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 200 mW in CW mode with a far-field fast axis divergence angle of ~ 57 degrees.
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Augustinas Vizbaras, Edgaras Dvinelis, Mindaugas Greibus, Augustinas Trinkunas, Deividas Kovalenkovas, Ieva Šimonytė, and Kristijonas Vizbaras "High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899319 (31 January 2014); https://doi.org/10.1117/12.2036523
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