31 January 2014 Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications
Author Affiliations +
Abstract
Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced night vision imaging using large format focal plane type detectors for defense and security applications. Here we report on our results of GaInAs PIN photo detector structures grown on 2”, 3” and 4” InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when moving to larger platen configurations, high degree of thickness uniformity (<3%, FTIR), lattice mismatch (<0.1%, XRD) and compositional uniformity (<2 nm, PL) can be maintained. The surface quality of epitaxial wafers will be assessed by various surface analytical techniques. We also make comparisons with the performance of 2”, 3” and 4” photodetector structures grown, this demonstrating that MOCVD production processes have been successfully scaled. We conclude by discussing the material requirements for large area infrared focal plane array photodetectors and describe how MOCVD growth technology will address industry’s requirements for increasing device sizes with improved performance.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark J. Furlong, Mark J. Furlong, Mark Mattingley, Mark Mattingley, Sung Wook Lim, Sung Wook Lim, Matthew Geen, Matthew Geen, Wynne Jones, Wynne Jones, } "Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89931I (31 January 2014); doi: 10.1117/12.2042394; https://doi.org/10.1117/12.2042394
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Modeling analysis metrics for panoramic sensors
Proceedings of SPIE (May 12 2015)
Growth of III-nitrides for photodetector applications
Proceedings of SPIE (April 15 1997)
Toward single-photon imaging at short wave infrared (SWIR)
Proceedings of SPIE (September 01 2010)
Challenges for third-generation cooled imagers
Proceedings of SPIE (October 10 2003)
Hyperspectral imaging of coastal regions from the ISS
Proceedings of SPIE (January 20 2005)

Back to Top