Abstract
Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a
wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced
night vision imaging using large format focal plane type detectors for defense and security applications. Here we report
on our results of GaInAs PIN photo detector structures grown on 2”, 3” and 4” InP substrates by low pressure
Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor
configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when
moving to larger platen configurations, high degree of thickness uniformity (<3%, FTIR), lattice mismatch (<0.1%,
XRD) and compositional uniformity (<2 nm, PL) can be maintained. The surface quality of epitaxial wafers will be
assessed by various surface analytical techniques. We also make comparisons with the performance of 2”, 3” and 4”
photodetector structures grown, this demonstrating that MOCVD production processes have been successfully scaled.
We conclude by discussing the material requirements for large area infrared focal plane array photodetectors and
describe how MOCVD growth technology will address industry’s requirements for increasing device sizes with
improved performance.
