19 February 2014 Near-infrared cut-off filters based on CMOS nanostructures for ambient light sensors and image sensors
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Abstract
Silicon based photodiodes provide spectral response in the visible wavelength range (VIS) but also in the near-infrared (NIR). For ambient light sensors (ALS) and image sensors with high color reproducibility the sensitivity in the NIR is unwanted as it impairs the sensing performance. Typically, external thin film filters are applied as near-infrared cut-off filters added to the photodiode or image sensor. We demonstrate plasmonic nanostructures fabricated directly within an extended CMOS (complementary metal–oxide–semiconductor) process. Designs in one and two metal layers are used and enable ambient light sensors as well as image sensors with pixel level NIR-blocking filters for color vision and additional NIR-sensitive pixels for simultaneous acquisition of VIS and NIR images.
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Stephan Junger, Stephan Junger, Nanko Verwaal, Nanko Verwaal, Wladimir Tschekalinskij, Wladimir Tschekalinskij, Norbert Weber, Norbert Weber, } "Near-infrared cut-off filters based on CMOS nanostructures for ambient light sensors and image sensors", Proc. SPIE 8994, Photonic and Phononic Properties of Engineered Nanostructures IV, 89941K (19 February 2014); doi: 10.1117/12.2039470; https://doi.org/10.1117/12.2039470
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