Optical and electrical characterization of surface passivated GaAs nanostructures

Shermin Arab; Chun Yung Chi; Maoqing Yao; Chia-Chi Chang; P. Daniel Dapkus; Stephen B. Cronin

doi:10.1117/12.2040999

19 February 2014 Optical and electrical characterization of surface passivated GaAs nanostructures

Shermin Arab, Chun Yung Chi, Maoqing Yao, Chia-Chi Chang, P. Daniel Dapkus, Stephen B. Cronin

Proceedings Volume 8996, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI; 89960G (2014) https://doi.org/10.1117/12.2040999
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

GaAs nanostructures are used in different optoelectronic applications including solar cells, LEDs and fast electronics. Although GaAs shows outstanding optical properties, it suffers from surface states and consequently high surface recombination velocity. The surface depletion effects lead to semi-insulating behaviors in GaAs devices. Passivation of GaAs nanostructures (AlGaAs or ionic liquid) lead to surface stability and improvement in optoelectronic properties. We provide a systematic study to compare the optical and electrical improvement after passivation (AlGaAs or ionic liquid) of GaAs nanostructure including nanowires and nanosheets. Both room temperature and low temperature photoluminescent (PL) spectra indicate increase in optical activity of GaAs nanostructures after passivation. Electron beam induced current (EBIC) measurements reveal the diffusion length of carries in different GaAs nanostructures.

Citation Download Citation

Shermin Arab, Chun Yung Chi, Maoqing Yao, Chia-Chi Chang, P. Daniel Dapkus, and Stephen B. Cronin "Optical and electrical characterization of surface passivated GaAs nanostructures", Proc. SPIE 8996, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI, 89960G (19 February 2014); https://doi.org/10.1117/12.2040999

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