21 February 2014 Slow-light transmission in the metal-dielectric structure based on plasmon-induced transparency
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Proceedings Volume 8998, Advances in Slow and Fast Light VII; 899808 (2014) https://doi.org/10.1117/12.2047581
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
The slow light technology prompts the realization of the all-optical storage, by which one can store the information of different wavelengths at their corresponding locations. The induction of plasmon induced transparency (PIT) provides a reliable and easy implement way to achieve slow light transmission and optical storage on the nanometer scale. Meanwhile, the linewidth and position of the PIT can be adjusted by changing the parameters of materials and structures, rather than just depend on the atom level itself in Electromagnetically induced transparency (EIT). More importantly, it can also be integrated with semiconductor devices on the chip, which is an exciting expectation for optoelectronic integration. PIT technology can pave a new way to optical information processing.
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Yundong Zhang, Yundong Zhang, Jin Li, Jin Li, Hanyang Li, Hanyang Li, Chengbao Yao, Chengbao Yao, Ping Yuan, Ping Yuan, } "Slow-light transmission in the metal-dielectric structure based on plasmon-induced transparency", Proc. SPIE 8998, Advances in Slow and Fast Light VII, 899808 (21 February 2014); doi: 10.1117/12.2047581; https://doi.org/10.1117/12.2047581
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