Electro-luminescent cooling in the deep sub-bandgap bias regime

Parthiban Santhanam

doi:10.1117/12.2040497

27 January 2015 Electro-luminescent cooling in the deep sub-bandgap bias regime

Parthiban Santhanam

Proceedings Volume 9000, Laser Refrigeration of Solids VII; 900007 (2015) https://doi.org/10.1117/12.2040497
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Recent work on electro-luminescent cooling has focused either on diodes at forward bias voltages just below the bandgap energy, where high cooling power density is possible, or voltages below the thermal voltage, where the effect is more tolerant to parasitic non-radiative recombination. Here we consider the possibilities for diodes designed to operate at intermediate voltages. Numerical calculations suggest that design for this regime may enable near- and mid-infrared devices capable of solid-state refrigeration with sufficient power density for some applications.

Citation Download Citation

Parthiban Santhanam "Electro-luminescent cooling in the deep sub-bandgap bias regime", Proc. SPIE 9000, Laser Refrigeration of Solids VII, 900007 (27 January 2015); https://doi.org/10.1117/12.2040497

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