27 February 2014 1060nm 28-Gbps VCSEL developed at Furukawa
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Abstract
This paper presents recent development results of our 28-Gbps VCSELs featured with double intra-cavity structure and a lasing wavelength of 1060 nm. The double intra-cavity realizes very low cavity loss due to undoped semiconductor bottom DBR and dielectric top DBR layers. Compressively strained InGaAs MQW provides high differential gain that contributes to low power consumption and high reliability. Based on our 10-Gbps VCSEL structure, we carefully optimized MQW, selective oxide structure, cavity length, and doping profile in order to achieve high speed operation while maintaining high reliability and other laser performances. The developed VCSELs exhibit modulation 3 dB-bandwidth exceeding 20 GHz and D-factor of 10 GHz/(mA)1/2. Typical threshold current and slope efficiency are 0.5 mA and 0.5 W/A, respectively. The paper also discusses static and dynamic characteristics of VCSELs with various oxide aperture sizes simultaneously fabricated on the same wafer. For a longer transmission distance and better optical coupling to a multimode fiber, optical lateral confinement is precisely controlled to reduce spectral width as well as far-field pattern. Clearly opened eye diagrams are obtained at a bit rate of 28 Gbps. Bit error rate tests are also performed and 28 Gbps error free transmission has been confirmed over 300 meters of multimode-fiber optimized for 1060 nm with a PRBS pattern length of 231-1.
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Toshihito Suzuki, Toshihito Suzuki, Masaki Funabashi, Masaki Funabashi, Hitoshi Shimizu, Hitoshi Shimizu, Kazuya Nagashima, Kazuya Nagashima, Shinichi Kamiya, Shinichi Kamiya, Akihiko Kasukawa, Akihiko Kasukawa, } "1060nm 28-Gbps VCSEL developed at Furukawa", Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 900104 (27 February 2014); doi: 10.1117/12.2042857; https://doi.org/10.1117/12.2042857
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