Tunable MEMS-VCSEL with >140-nm tuning range using tuning range using SiO2/SiC-based MEMS-DBR

Christian Gierl; Karolina Zogal; Sujoy Paul; Franko Küppers

doi:10.1117/12.2041280

27 February 2014 Tunable MEMS-VCSEL with >140-nm tuning range using tuning range using SiO₂/SiC-based MEMS-DBR

Christian Gierl, Karolina Zogal, Sujoy Paul, Franko Küppers

Author Affiliations +

Proceedings Volume 9001, Vertical-Cavity Surface-Emitting Lasers XVIII; 900107 (2014) https://doi.org/10.1117/12.2041280
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

With the use of SiO₂/SiC based movable MEMS-DBR, the continuous tuning range of electrically pumped MEMS-VCSEL can be extended to > 140 nm. The high refractive index contrast of Δn > 1 between SiO₂ and SiC reduces the needed number of layers (11 layers) and broadens the spectral width of the reflectivity (448nm for R > 99.5 %) by more than a factor of two compared to the material system SiO₂/Si₃N₄ (23 layers / 216nm for R > 99.5 %), which has been used for the current world record continuous tuning range of 100nm of an electrically pumped MEMS-VCSEL. The smaller number of needed DBR-layers enables a significant reduction of the overall mirror thickness, which enables a further miniaturization of the device and thus an increase of the free spectral range (FSR), the ultimate limit for continuous wavelength tuning. In this paper we evaluate the performance advantages of using SiO₂/SiC based MEMS-DBR for tunable VCSEL by using Transfer-matrix method simulations.

Citation Download Citation

Christian Gierl, Christian Gierl, Karolina Zogal, Karolina Zogal, Sujoy Paul, Sujoy Paul, Franko Küppers, Franko Küppers, "Tunable MEMS-VCSEL with >140-nm tuning range using tuning range using SiO₂/SiC-based MEMS-DBR", Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 900107 (27 February 2014); doi: 10.1117/12.2041280; https://doi.org/10.1117/12.2041280

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