27 February 2014 Progress on vertical-cavity surface-emitting laser arrays for infrared illumination applications
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For infrared illumination with wavelength range of 808nm-1064nm, vertical-cavity surface-emitting lasers (VCSELs) offer many advantageous properties including superior beam quality (such as low divergence, circular shape beam and speckle-free image), increased eye safety, high reliability and low manufacturing cost. We report our progress on highpower high-efficiency VCSELs and two dimensional (2D) VCSEL arrays for such illumination applications. GaAs-based VCSEL wafers are grown by MOCVD and processed into either top-emitting or bottom-emitting devices depending on the emission wavelength and applications. Results from both single devices and arrays are presented. In particular, record-high power conversion efficiency (PCE) of 63.4% with 300mW output was achieved from VCSELs at 1064nm. Such VCSELs also operate with <55% PCE at 50C. For a 2mm by 10mm array, 56.4% PCE with 150W output was demonstrated. Using those VCSELs and arrays as building blocks, various high power illuminators ranging from a few Watts to over 100 kiloWatts have been fabricated.
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Delai Zhou, Delai Zhou, Jean-Francois Seurin, Jean-Francois Seurin, Guoyang Xu, Guoyang Xu, Alexander Miglo, Alexander Miglo, Daizong Li, Daizong Li, Qing Wang, Qing Wang, Mukta Sundaresh, Mukta Sundaresh, Sam Wilton, Sam Wilton, Joe Matheussen, Joe Matheussen, Chuni Ghosh, Chuni Ghosh, "Progress on vertical-cavity surface-emitting laser arrays for infrared illumination applications", Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 90010E (27 February 2014); doi: 10.1117/12.2040429; https://doi.org/10.1117/12.2040429

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