27 February 2014 Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes
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Abstract
We investigate the influence of the epitaxial layer roughness on the far-field profile of the optical mode in gallium Nitride-based, c-plane ridge waveguide laser diodes. Occasionally, we observe long-range growth instabilities leading to a periodical modulation of the surface. Amplitude and period of this surface roughness is typically on the order of a few 10nm and 20 μm, respectively. Using different characterization techniques, we investigate the influence of the surface roughness on the vertical mode profile along the fast axis in the far-field, in particular the contribution of light scattering at the rough waveguide interfaces, as well as that of substrate modes.
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Katarzyna Holc, Katarzyna Holc, Annik Jakob, Annik Jakob, Thomas Weig, Thomas Weig, Klaus Köhler, Klaus Köhler, Oliver Ambacher, Oliver Ambacher, Ulrich T. Schwarz, Ulrich T. Schwarz, } "Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020I (27 February 2014); doi: 10.1117/12.2037336; https://doi.org/10.1117/12.2037336
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