27 February 2014 Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
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We demonstrate pulse periods from 0:13 to 10 ns of GaN{based ridge waveguide laser diodes with monolithically integrated absorbers in the regimes of relaxation oscillations and self{Q{switching as function of gain current and absorber voltage. We introduce a simple model for the self{Q{switching regime, describing the pulse period in terms of current injection and spontaneous emission (including Auger recombination), only. At reverse voltages larger than 35V the modal absorption exceeds 500 cm-1, which cannot be explained solely by transitions of bound states in the quantum wells. Calculations based on wavefunction overlap and quantum con ned Stark e ect (QCSE) predict a decrease of absorption at such large bias. In contrast, we show experimental ndings, proving that the absorption further increases. Due to the strong tilt of the band pro le in this regime, we take into account the Franz{Keldysh e ect in the barriers and the waveguide and discuss its possible in uence on the absorption, leading to an increased absorption at large reverse bias.
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Thomas Weig, Thomas Weig, Gerrit Lükens, Gerrit Lükens, Katarzyna Holc, Katarzyna Holc, Klaus Köhler, Klaus Köhler, Joachim Wagner, Joachim Wagner, Ulrich T. Schwarz, Ulrich T. Schwarz, "Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020K (27 February 2014); doi: 10.1117/12.2039134; https://doi.org/10.1117/12.2039134


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